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1. Epc2215
2. Fet Family

EPC2215（8 mΩ、162 Apulsed）和EPC2207（22 mΩ、54 Apulsed）的尺寸比前代200 V eGaN器件大约缩小50%，而性能却倍增。 与基准硅器件相比，这两款氮化镓器件的. BOARD DEV EPC2215 200V EGAN FET. EPC £91.14000 Details. EPC9143KIT EVAL BOARD 48V 300W 1/16 BRCK. EPC £290.12000 Details. Additional Resources Standard Package: 1: Other Names 917-1218-1: Need Help? Digi-Key's team of Engineers and Technicians.

• Latest Generation 200-V GaN FETs Double The Performance, EPC’s EPC2215 and EPC2207 200-V eGaN FETs, How2Power Today, September 2020 issue. SiC-Based Three-Phase Driver Module Delivers 80 A Peak, Is Fully Integrated, Apex Microtechnology’s SA310 three-phase driver, How2Power Today, July 2020 issue.
• Efficient Power Conversion Corporation (EPC) is the leader in enhancement mode Gallium Nitride based power management devices. EPC was the first to introduce enhancement-mode Gallium-Nitride-on-Silicon (eGaN®) FETs as power MOSFET replacements in applications such as point-of-load converters, Power over Ethernet (PoE), server and computer DC-DC converters, LED lighting, cell phones, RF.

eGaN® FET DATASHEET EPC2215 EPC2215 – Enhancement Mode Power Transistor
VDS , 200 V
RDS(on) , 8 mΩ
ID , 32 A D EFFICIENT POWER CONVERSION G HAL S Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows
very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally
low QG and zero QRR. The end result is a device that can handle tasks where very high switching
frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings
PARAMETER
VDS
ID Drain-to-Source Voltage (Continuous) VALUE UNIT 200 V Continuous (TA = 25°C) 32 Pulsed (25°C, TPULSE = 300 µs) 162 Gate-to-Source Voltage 6 Gate-to-Source Voltage -4 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 VGS A
V
°C Applications
• DC-DC Converters
• BLDC Motor Drives
• Sync Rectification for
AC/DC and DC-DC
• Multi-level AC/DC
Power Supplies • Wireless Power
• Solar Micro Inverters
• Robotics
• Class-D Audio Benefits Thermal Characteristics
PARAMETER EPC2215 eGaN® FETs are supplied only in
passivated die form with solder bars. …

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2215 and EPC2207 200 V eGaN FETs. The applications for these leading-edge devices include class-D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

The EPC2215 (8 mΩ, 162 A_pulsed) and the EPC2207 (22 mΩ, 54 A_pulsed) are about half the size of the prior generation 200 V eGaN devices and double the performance. The performance advantage over a benchmark silicon device is even higher. The EPC2215 has 33% lower on-resistance, yet is 15 times smaller in size. Gate charge (Q_G) is ten times smaller than the silicon MOSFET benchmark with the new technology, and like all eGaN FETs, there is no reverse recovery charge (Q_RR) enabling lower distortion class D audio amplifiers as well as more efficient synchronous rectifiers and motor drives.

According to Alex Lidow, EPC’s co-founder and CEO, “This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs. The inevitable displacement of the aging power MOSFET with GaN devices is becoming clearer every day.”

EPC worked in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400 V, 2.5 kW-capable eGaN FET-based four-level flying capacitor multilevel bridgeless totem-pole rectifier that is suitable for data center applications using the new EPC2215 200 V device. Professor Alex Huang from the University of Texas at Austin commented that, “the advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion.”

Price and Availability

Pricing for products and related development and reference design boards are noted in the table below. All products and boards are available from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

About EPC

Epc2215

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

Visit our web site: www.epc-co.com

Fet Family

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.